As⁺イオン注入したゲルマニウム層の化学分析
Bibliographic Information
- Other Title
-
- As^+イオン注入したゲルマニウム層の化学分析(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)
- As ⁺ イオン チュウニュウ シタ ゲルマニウムソウ ノ カガク ブンセキ
- Chemical Analysis of As^+ -implanted Ge(100)
Search this article
Description
As^+ ions were implanted into p-type Ge(100) at a dose of 1x10^<15> cm^<-2> and acceleration voltage of 10 keV, and an impact of activation annealing temperature on the chemical structure has been investigated systematically. After ion implantation, a formation of 19 nm-thick amorphous Ge including accepter-like defects was observed. During activation annealing in N_2 ambience, re-crystallization of amorphous Ge layer and activation of implanted As^+ ions were promoted from the substrate side. Hard x-ray photoemission spectroscopy (HAXPES) analyses of 500℃ annealed sample show the presence of two chemical states of As ions originating from activated As (As^<1+>) and inactivated As (As^<0+>). From the spectral deconvolution, activation ratio of implanted As ions was crudely estimated to be 〜4%, which was almost consistent with the electrical properties.
Journal
-
- 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス
-
電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 112 (92), 63-67, 2012-06-14
一般社団法人電子情報通信学会
- Tweet
Keywords
Details 詳細情報について
-
- CRID
- 1050001338804689664
-
- NII Article ID
- 110009588307
-
- NII Book ID
- AA1123312X
-
- HANDLE
- 2237/23586
-
- NDL BIB ID
- 023811307
-
- ISSN
- 09135685
-
- Text Lang
- ja
-
- Article Type
- journal article
-
- Data Source
-
- IRDB
- NDL
- CiNii Articles