As⁺イオン注入したゲルマニウム層の化学分析

IR IR (HANDLE) Web Site 7 References Open Access

Bibliographic Information

Other Title
  • As^+イオン注入したゲルマニウム層の化学分析(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)
  • As ⁺ イオン チュウニュウ シタ ゲルマニウムソウ ノ カガク ブンセキ
  • Chemical Analysis of As^+ -implanted Ge(100)

Search this article

Description

As^+ ions were implanted into p-type Ge(100) at a dose of 1x10^<15> cm^<-2> and acceleration voltage of 10 keV, and an impact of activation annealing temperature on the chemical structure has been investigated systematically. After ion implantation, a formation of 19 nm-thick amorphous Ge including accepter-like defects was observed. During activation annealing in N_2 ambience, re-crystallization of amorphous Ge layer and activation of implanted As^+ ions were promoted from the substrate side. Hard x-ray photoemission spectroscopy (HAXPES) analyses of 500℃ annealed sample show the presence of two chemical states of As ions originating from activated As (As^<1+>) and inactivated As (As^<0+>). From the spectral deconvolution, activation ratio of implanted As ions was crudely estimated to be 〜4%, which was almost consistent with the electrical properties.

Journal

References(7)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top