金属/GeO2界面における化学結合状態の光電子分光分析
Bibliographic Information
- Other Title
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- 金属/GeO_2界面における化学結合状態の光電子分光分析(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)
- キンゾク GeO2 カイメン ニ オケル カガク ケツゴウ ジョウタイ ノ コウデンシ ブンコウ ブンセキ
- Photoemission Study of Chemical Bonding Features at Metal/GeO_2 Interfaces
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Abstract
We have investigated chemical bonding features at thermally-grown GeO_2/Ge(100) and metals (Al, Au and Pt)/GeO_2 interfaces by using high-resolution X-ray photoelectron spectroscopy (XPS). After the Al evaporation on GeO_2 thicker than 1.9nm initially, a reduction of GeO_2 accompanied with the generation of Al-Ge bonds was observed near the interface between Al and GeO_2. From the deconvolution of measured Ge3ds/2 spectra taken after physical vapor deposition of Au- and Pt-ultrathin films on thermally-grown GeO_2, we have confirmed the formation of Ge sub-oxide components (GeO_x 0<x<2) at the metal/GeO_2 interfaces being quantitatively comparable to sub-oxides at the thermally-grown GeO_2/Ge(100) interface.
Journal
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- 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス
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電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 111 (114), 63-68, 2011-06-27
一般社団法人電子情報通信学会
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Details 詳細情報について
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- CRID
- 1050564288758106240
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- NII Article ID
- 110008800857
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- NII Book ID
- AA1123312X
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- HANDLE
- 2237/23574
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- NDL BIB ID
- 11200224
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- ISSN
- 09135685
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- Text Lang
- ja
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- Article Type
- journal article
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- Data Source
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- IRDB
- NDL
- CiNii Articles