Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment

Rooozeboom, F., Electrochemical Society. Meeting, Electrochemical Society

Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment

CiNii 所蔵館 2館

書誌事項

タイトル: "Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment"

責任表示: editors, F. Rooozeboom ... [et al.] ; sponsoring divisions, Electronics and Photonics, Dielectric Science & Technology, High Temperature Materials

出版者

Electrochemical Society

出版年月

c2006

書籍サイズ: 23 cm

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注記

Includes bibliographical references and indexes

"The international symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes, and Equipment, 2 will be held from October 30-November 2, 2006 in the Moon Palace in the scenic city of Cancun, Mexico, as a part of the 210th Meeting of the Electrochemical Society. ..."--p. iii

Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment

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Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment

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この図書・雑誌をさがす

注記

関連図書・雑誌

詳細情報 詳細情報について

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