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Relaxation effects in MOS devices due to tunnel exchange with near-interface oxide traps
CiNii
Available at 1 libraries
Bibliographic Information
- Title
- "Relaxation effects in MOS devices due to tunnel exchange with near-interface oxide traps"
- Statement of Responsibility
- Tewksbury, Theodore L.
- Publisher
-
- Massachusetts Institute of Technology
- Publication Year
-
- 1992
- Book size
- 11×15 cm
- Format
- microform(microfiche)
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Details 詳細情報について
-
- CRID
- 1130282273023387008
-
- NII Book ID
- BB03898756
-
- Text Lang
- en
-
- Country Code
- xx
-
- Title Language Code
- en
-
- Place of Publication
-
- [Cambridge, Ma.]
-
- Data Source
-
- CiNii Books
