Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant
説明
Hole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes2B+ (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C6F5)4B]−, can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe2) films. Upon doping, the sheet resistance of large-area polycrystalline WSe2 monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 57 (2S2), 02CB15-, 2018-01-18
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360002221359587072
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- NII論文ID
- 210000148662
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- ISSN
- 13474065
- 00214922
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- HANDLE
- 10754/627245
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- データソース種別
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