Highly stable fluorine-passivated In–Ga–Zn–O thin-film transistors under positive gate bias and temperature stress
書誌事項
- 公開日
- 2014-11-01
- 権利情報
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- http://iopscience.iop.org/info/page/text-and-data-mining
- http://iopscience.iop.org/page/copyright
- DOI
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- 10.7567/apex.7.114103
- 公開者
- IOP Publishing
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説明
A highly stable fluorine-passivated In–Ga–Zn–O (IGZO) thin-film transistor (TFT) was demonstrated under positive gate bias and temperature stress (PBTS). The defects in the IGZO TFT were passivated by fluorine, which was introduced into a SiOx etching stopper during the deposition of fluorinated silicon nitride for passivation and diffused during post-fabrication annealing. From the results of secondary ion mass spectrometry analysis, the reliability of the IGZO TFT under PBTS was observed to be markedly improved even at a stress temperature of 100 °C when fluorine diffusion was detected in the IGZO channel. The fluorine-passivated IGZO TFT has improved operation temperature and is advantageous for achieving high-performance and high-reliability oxide TFTs for next-generation displays.
収録刊行物
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- Applied Physics Express
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Applied Physics Express 7 (11), 114103-, 2014-11-01
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360003449884279168
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- NII論文ID
- 210000137300
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- ISSN
- 18820786
- 18820778
- https://id.crossref.org/issn/18820786
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- データソース種別
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- Crossref
- CiNii Articles
- OpenAIRE
