Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

DOI PDF 3 Citations

Journal

IEEE Transactions on Electron Devices

IEEE Transactions on Electron Devices 61 (8), 2793-2801, 2014-08

Institute of Electrical and Electronics Engineers (IEEE)

Citations (3)*help

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Details 詳細情報について

CRID

1360011146514877056
DOI

10.1109/ted.2014.2332235
ISSN

15579646

00189383
Web Site

http://xplorestaging.ieee.org/ielx7/16/6861490/06849487.pdf?arnumber=6849487
Data Source
- Crossref

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