Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

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  • Kunihiko Iwamoto
    MIRAI 1 , Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba West 7, Tsukuba 305-8569, Japan
  • Yuuichi Kamimuta
    MIRAI 1 , Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba West 7, Tsukuba 305-8569, Japan
  • Arito Ogawa
    MIRAI 1 , Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba West 7, Tsukuba 305-8569, Japan
  • Yukimune Watanabe
    MIRAI 1 , Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba West 7, Tsukuba 305-8569, Japan
  • Shinji Migita
    MIRAI 2 , Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba West 7, Tsukuba 305-8569, Japan
  • Wataru Mizubayashi
    MIRAI 2 , Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba West 7, Tsukuba 305-8569, Japan
  • Yukinori Morita
    MIRAI 2 , Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba West 7, Tsukuba 305-8569, Japan
  • Masashi Takahashi
    MIRAI 1 , Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba West 7, Tsukuba 305-8569, Japan
  • Hiroyuki Ota
    MIRAI 2 , Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba West 7, Tsukuba 305-8569, Japan
  • Toshihide Nabatame
    MIRAI 1 , Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba West 7, Tsukuba 305-8569, Japan
  • Akira Toriumi
    MIRAI 2 , Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba West 7, Tsukuba 305-8569, Japan

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<jats:p>We have examined an origin of the flatband voltage (VFB) shift in metal-oxide-semiconductor capacitors by employing bilayer high-k gate dielectrics consisting of HfO2 and Al2O3 on the interfacial SiO2 layer. We found that the high-k∕SiO2 interface affects the VFB shift through an electrical dipole layer formation at its interface, regardless of the gate electrode materials. Furthermore, we demonstrated that the VFB shift in the metal/high-k gate stack is determined only by the dipole at high-k∕SiO2 interface, while for the Si-based gate it is determined by both gate/high-k and high-k∕SiO2 interfaces.</jats:p>

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