Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface
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- Kunihiko Iwamoto
- MIRAI 1 , Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba West 7, Tsukuba 305-8569, Japan
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- Yuuichi Kamimuta
- MIRAI 1 , Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba West 7, Tsukuba 305-8569, Japan
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- Arito Ogawa
- MIRAI 1 , Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba West 7, Tsukuba 305-8569, Japan
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- Yukimune Watanabe
- MIRAI 1 , Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba West 7, Tsukuba 305-8569, Japan
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- Shinji Migita
- MIRAI 2 , Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba West 7, Tsukuba 305-8569, Japan
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- Wataru Mizubayashi
- MIRAI 2 , Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba West 7, Tsukuba 305-8569, Japan
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- Yukinori Morita
- MIRAI 2 , Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba West 7, Tsukuba 305-8569, Japan
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- Masashi Takahashi
- MIRAI 1 , Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba West 7, Tsukuba 305-8569, Japan
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- Hiroyuki Ota
- MIRAI 2 , Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba West 7, Tsukuba 305-8569, Japan
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- Toshihide Nabatame
- MIRAI 1 , Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba West 7, Tsukuba 305-8569, Japan
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- Akira Toriumi
- MIRAI 2 , Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba West 7, Tsukuba 305-8569, Japan
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説明
<jats:p>We have examined an origin of the flatband voltage (VFB) shift in metal-oxide-semiconductor capacitors by employing bilayer high-k gate dielectrics consisting of HfO2 and Al2O3 on the interfacial SiO2 layer. We found that the high-k∕SiO2 interface affects the VFB shift through an electrical dipole layer formation at its interface, regardless of the gate electrode materials. Furthermore, we demonstrated that the VFB shift in the metal/high-k gate stack is determined only by the dipole at high-k∕SiO2 interface, while for the Si-based gate it is determined by both gate/high-k and high-k∕SiO2 interfaces.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 92 (13), 132907-, 2008-03-31
AIP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360292619148926848
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- ISSN
- 10773118
- 00036951
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- データソース種別
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