Distribution coefficients of Ga, As, and P during growth of InGaAsP layers by liquid-phase epitaxy

詳細情報 詳細情報について

• CRID

  1360576122702507520

• DOI

  10.1016/0022-0248(76)90271-2

• ISSN

  00220248

• Web Site

  https://api.elsevier.com/content/article/PII:0022024876902712?httpAccept=text/xml

  https://api.elsevier.com/content/article/PII:0022024876902712?httpAccept=text/plain

• データソース種別

  • Crossref