A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-<i>V</i> <sub>MIN</sub> Applications
収録刊行物
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- IEEE Journal of Solid-State Circuits
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IEEE Journal of Solid-State Circuits 56 (1), 179-187, 2021-01
Institute of Electrical and Electronics Engineers (IEEE)
