Radiation response of silicon carbide metal–oxide–semiconductor transistors in high dose region

DOI Web Site Web Site 被引用文献6件 参考文献25件

書誌事項

公開日
2015-10-29
資源種別
journal article
権利情報
  • https://iopscience.iop.org/page/copyright
  • https://iopscience.iop.org/info/page/text-and-data-mining
DOI
  • 10.7567/jjap.55.01ad01
公開者
IOP Publishing

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説明

<jats:title>Abstract</jats:title> <jats:p>Radiation response of vertical structure hexagonal (4H) silicon carbide (SiC) power metal–oxide–semiconductor field effect transistors (MOSFETs) was investigated up to 5.8 MGy. The drain current–gate voltage curves for the MOSFETs shifted from positive to negative voltages due to irradiation. However, the drain current–gate voltage curve shifts for the MOSFETs irradiated at 150 °C was smaller than those irradiated at room temperature. Thus, the shift of threshold voltage due to irradiation was suppressed by irradiation at 150 °C. No significant change or slight decrease in subthreshold voltage swing for the MOSFETs irradiated at 150 °C was observed. The value of channel mobility increased due to irradiation, and the increase was enhanced by irradiation at 150 °C comparing to irradiation at RT.</jats:p>

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