Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors
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- P. J. McWhorter
- Sandia National Laboratories, Albuquerque, New Mexico 87185
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- P. S. Winokur
- Sandia National Laboratories, Albuquerque, New Mexico 87185
書誌事項
- 公開日
- 1986-01-13
- DOI
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- 10.1063/1.96974
- 公開者
- AIP Publishing
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説明
<jats:p>A new technique is presented for separating the threshold-voltage shift of a metal-oxide-semiconductor transistor into shifts due to interface traps and trapped-oxide charge. This technique is applied to threshold-voltage shifts on an n-channel transistor that result from ionizing radiation.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 48 (2), 133-135, 1986-01-13
AIP Publishing
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詳細情報 詳細情報について
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- CRID
- 1361137044917891712
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- DOI
- 10.1063/1.96974
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- ISSN
- 10773118
- 00036951
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- データソース種別
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- Crossref
