Remote AP‐PECVD of Silicon Dioxide Films from Hexamethyldisiloxane (HMDSO)

S. E. Alexandrov, N. McSporran, M. L. Hitchman

doi:10.1002/cvde.200506385

Remote AP‐PECVD of Silicon Dioxide Films from Hexamethyldisiloxane (HMDSO)

DOI Web Site Web Site 被引用文献4件

書誌事項

公開日: 2005-12

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http://onlinelibrary.wiley.com/termsAndConditions#vor

DOI

10.1002/cvde.200506385

公開者: Wiley

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説明

<jats:title>Abstract</jats:title><jats:p>In this paper we report on a study of an AP‐PECVD process based on a simple, and very inexpensive, dielectric barrier discharge using a standard mains supply frequency. We have investigated the effect of a range of deposition parameters on the properties of silicon oxide layers grown from a HMDSO/O<jats:sub>2</jats:sub>/Ar system. It is shown that the flux of energetic species from the discharge generation is a critical parameter in determining the growth rate and characteristics of the deposited films. Growth rates up to 10 nm min<jats:sup>–1</jats:sup> can be achieved and layer properties, such as refractive index and breakdown voltage, are comparable with those obtained by more conventional CVD processes. General optimum conditions for high growth rates and good quality films can be inferred from the results.</jats:p>