Predicting synergy in atomic layer etching

DOI PDF 被引用文献9件
  • Keren J. Kanarik
    Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
  • Samantha Tan
    Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
  • Wenbing Yang
    Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
  • Taeseung Kim
    Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
  • Thorsten Lill
    Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
  • Alexander Kabansky
    Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
  • Eric A. Hudson
    Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
  • Tomihito Ohba
    Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
  • Kazuo Nojiri
    Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
  • Jengyi Yu
    Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
  • Rich Wise
    Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
  • Ivan L. Berry
    Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
  • Yang Pan
    Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
  • Jeffrey Marks
    Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538
  • Richard A. Gottscho
    Lam Research Corporation , 4400 Cushing Parkway, Fremont, California 94538

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<jats:p>Atomic layer etching (ALE) is a multistep process used today in manufacturing for removing ultrathin layers of material. In this article, the authors report on ALE of Si, Ge, C, W, GaN, and SiO2 using a directional (anisotropic) plasma-enhanced approach. The authors analyze these systems by defining an “ALE synergy” parameter which quantifies the degree to which a process approaches the ideal ALE regime. This parameter is inspired by the ion-neutral synergy concept introduced in the 1979 paper by Coburn and Winters [J. Appl. Phys. 50, 5 (1979)]. ALE synergy is related to the energetics of underlying surface interactions and is understood in terms of energy criteria for the energy barriers involved in the reactions. Synergistic behavior is observed for all of the systems studied, with each exhibiting behavior unique to the reactant–material combination. By systematically studying atomic layer etching of a group of materials, the authors show that ALE synergy scales with the surface binding energy of the bulk material. This insight explains why some materials are more or less amenable to the directional ALE approach. They conclude that ALE is both simpler to understand than conventional plasma etch processing and is applicable to metals, semiconductors, and dielectrics.</jats:p>

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