書誌事項
- 公開日
- 2021-01-01
- 権利情報
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- http://creativecommons.org/licenses/by-nc-nd/4.0/
- https://iopscience.iop.org/info/page/text-and-data-mining
- DOI
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- 10.1149/2162-8777/abdc40
- 公開者
- The Electrochemical Society
この論文をさがす
説明
<jats:p>Chemical mechanical polishing (CMP) is widely accepted as the best planarization technique for fabricating nanoscale devices. A soft CMP pad that can enable higher oxide removal rates (RRs) and good planarity has been proposed for oxide CMP applications. In this study, three pads namely, Pad-1 (hard), Pad-2 (soft), and a commercial pad (hard) were used to polish blanket oxide, and STI patterned wafers. The Pad-2 demonstrated significantly higher RRs and better planarization than the hard pads. Post-polish pad texture analysis on Pad-2 showed a uniform surface asperity distribution. This is due to the novel method of pad manufacturing, which enables precise material placement and consistent pore construction.</jats:p>
収録刊行物
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- ECS Journal of Solid State Science and Technology
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ECS Journal of Solid State Science and Technology 10 (1), 014008-, 2021-01-01
The Electrochemical Society
