Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
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- B. Hoex
- Eindhoven University of Technology Department of Applied Physics, , P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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- S. B. S. Heil
- Eindhoven University of Technology Department of Applied Physics, , P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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- E. Langereis
- Eindhoven University of Technology Department of Applied Physics, , P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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- M. C. M. van de Sanden
- Eindhoven University of Technology Department of Applied Physics, , P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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- W. M. M. Kessels
- Eindhoven University of Technology Department of Applied Physics, , P.O. Box 513, 5600 MB Eindhoven, The Netherlands
書誌事項
- 公開日
- 2006-07-24
- DOI
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- 10.1063/1.2240736
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>Excellent surface passivation of c-Si has been achieved by Al2O3 films prepared by plasma-assisted atomic layer deposition, yielding effective surface recombination velocities of 2 and 13cm∕s on low resistivity n- and p-type c-Si, respectively. These results obtained for ∼30nm thick Al2O3 films are comparable to state-of-the-art results when employing thermal oxide as used in record-efficiency c-Si solar cells. A 7nm thin Al2O3 film still yields an effective surface recombination velocity of 5cm∕s on n-type silicon.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 89 (4), 042112-, 2006-07-24
AIP Publishing
