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- Yoshio Susa
- Tokyo Electron America, Inc. , 2400 Grove Blvd., Austin, Texas 78741
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- Hiroto Ohtake
- Tokyo Electron America, Inc. , 20175 NW Amberglen Court, Suite 140, Beaverton, Oregon 97006
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- Zhao Jianping
- Tokyo Electron America, Inc. , 2400 Grove Blvd., Austin, Texas 78741
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- Lee Chen
- Tokyo Electron America, Inc. , 2400 Grove Blvd., Austin, Texas 78741
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- Toshihisa Nozawa
- Tokyo Electron Technology Center of Sendai , 1 Techno-hills, Taiwa-cho, Kurokawa-gun, Miyagi 981-3629, Japan
書誌事項
- 公開日
- 2015-09-24
- DOI
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- 10.1116/1.4931785
- 公開者
- American Vacuum Society
この論文をさがす
説明
<jats:p>The mechanism of CO2 plasma ashing process was evaluated. CO2 plasma is a good candidate for the ashing process for photoresists because it generates a lot of CO2 ions. These ions can ash equivalent amounts of carbon film with less low-k damage than can oxygen radicals. A high ratio of CO2 ions to oxygen radicals in CO2 plasma can make the ashing process efficient with less low-k damage. The ratio can be controlled by changing the CO2 flow rate, chamber pressure, and radio frequency (RF). When a lower RF frequency of 2 MHz as a plasma generator was used, the authors reduced sidewall low-k damage in patterned structures. CO2 ions can perform anisotropic ashing because the velocity distribution of CO2 ions is directional due to acceleration with a plasma sheath.</jats:p>
収録刊行物
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- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 33 (6), 2015-09-24
American Vacuum Society
