Selective atomic-level etching using two heating procedures, infrared irradiation and ion bombardment, for next-generation semiconductor device manufacturing
収録刊行物
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- Journal of Physics D: Applied Physics
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Journal of Physics D: Applied Physics 50 (19), 194001-, 2017-04-13
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1362544418695776896
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- ISSN
- 13616463
- 00223727
- http://id.crossref.org/issn/00223727
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- データソース種別
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- Crossref