Effects of N<sub>2</sub>O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability
-
- Keiko Fujihira
- Mitsubishi Electric Corporation
-
- Yoichiro Tarui
- Mitsubishi Electric Corporation
-
- Kenichi Ohtsuka
- Mitsubishi Electric Corporation
-
- Masayuki Imaizumi
- Mitsubishi Electric Corporation
-
- Tetsuya Takami
- Mitsubishi Electric Corporation
書誌事項
- 公開日
- 2005-05-15
- 権利情報
-
- https://www.scientific.net/PolicyAndEthics/PublishingPolicies
- https://www.scientific.net/license/TDM_Licenser.pdf
- DOI
-
- 10.4028/www.scientific.net/msf.483-485.697
- 公開者
- Trans Tech Publications, Ltd.
説明
<jats:p>The effect of N2O anneal on channel mobility of inversion-type 4H-SiC n-channel MOSFET has been systematically investigated. It is found that the mobility increases with increasing anneal temperature from 900 to 1150°C. The highest field effect mobility of 30 cm2/Vs is achieved by 1150°C anneal for 3 h, which is about 20 times higher than that for non-annealed MOSFET. In order to investigate the oxide reliability, TDDB measurement has been performed on SiO2 grown on n-type 4H-SiC. The oxide lifetime is found to be drastically improved by N2O anneal.</jats:p>
収録刊行物
-
- Materials Science Forum
-
Materials Science Forum 483-485 697-700, 2005-05-15
Trans Tech Publications, Ltd.
