Comparison of etching characteristics of SiO2 with ArF photoresist in C4F6 and C4F8 based dual-frequency superimposed capacitively coupled plasmas

DOI Web Site Web Site 2 Citations

Journal

Microelectronic Engineering

Microelectronic Engineering 84 (1), 165-172, 2007-01

Elsevier BV

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CRID

1363107368501474688
DOI

10.1016/j.mee.2006.10.031
ISSN

01679317
Web Site

https://api.elsevier.com/content/article/PII:S0167931706005223?httpAccept=text/xml

https://api.elsevier.com/content/article/PII:S0167931706005223?httpAccept=text/plain
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