Diffusivity measurements of silicon in silicon dioxide layers using isotopically pure material

DOI PDF 被引用文献10件
  • D. Tsoukalas
    Institute of Microelectronics, NCSR “Demokritos,” 15310 Aghia Paraskevi, Greece
  • C. Tsamis
    Institute of Microelectronics, NCSR “Demokritos,” 15310 Aghia Paraskevi, Greece
  • P. Normand
    Institute of Microelectronics, NCSR “Demokritos,” 15310 Aghia Paraskevi, Greece

書誌事項

公開日
2001-06-15
DOI
  • 10.1063/1.1371003
公開者
AIP Publishing

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説明

<jats:p>We report measurement of the silicon diffusion coefficient in silicon dioxide films using isotopically enriched Si28 silicon dioxide layers that enable relatively low Si30 concentration measurements to be performed using secondary ion mass spectrometry. Two types of experiments are made. Si30 atoms are introduced in excess in a stoichiometric isotopically pure silicon dioxide layer either by ion implantation or by a predeposition technique. These experiments are representative of any physical situation in which excess silicon atoms are introduced into silicon dioxide layers during silicon processing. The estimated diffusivity values are significantly higher than previously reported values for Si diffusion within a stoichiometric oxide and closer to reported values for excess Si diffusion within an oxide. The activation energy of the diffusivity is found to be 4.74 eV.</jats:p>

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