Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling
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- D. C. Worledge
- MRAM Development Alliance, IBM/Infineon Technologies, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
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- P. L. Trouilloud
- MRAM Development Alliance, IBM/Infineon Technologies, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
書誌事項
- 公開日
- 2003-07-07
- DOI
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- 10.1063/1.1590740
- 公開者
- AIP Publishing
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説明
<jats:p>We demonstrate a method for measuring magnetoresistance (MR) and resistance area product (RA) of unpatterned magnetic tunnel junction film stacks. The RA is measured by making a series of four point probe resistance measurements on the surface of an unpatterned wafer at various probe spacings. The key to this technique is in placing the probes at the appropriate spacings, on the order of microns for typical applications. The MR is obtained by repeating the measurement at different magnetic fields. A simple conceptual model and an exact analytical solution in good agreement with experimental data are presented. The current-in-plane tunneling method requires no processing, is fast, and provides reliable data which are reflective of the deposition only.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 83 (1), 84-86, 2003-07-07
AIP Publishing
