Trimethylaluminum as the Metal Precursor for the Atomic Layer Etching of Al<sub>2</sub>O<sub>3</sub> Using Sequential, Self-Limiting Thermal Reactions
-
- Younghee Lee
- Department of Chemistry and Biochemistry, ‡Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309, United States
-
- Jaime W. DuMont
- Department of Chemistry and Biochemistry, ‡Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309, United States
-
- Steven M. George
- Department of Chemistry and Biochemistry, ‡Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309, United States
収録刊行物
-
- Chemistry of Materials
-
Chemistry of Materials 28 (9), 2994-3003, 2016-04-26
American Chemical Society (ACS)