二次イオン質量分析法による多層薄膜界面の評価におけるCsX^+二次イオン検出の有効性

書誌事項

タイトル別名
  • Effectiveness of CsX+ secondary ions in SIMS analysis of multilayer interface.
  • 二次イオン質量分析法による多層薄膜界面の評価におけるCsX`+´二次イオン検出の有効性
  • 2ジ イオン シツリョウ ブンセキホウ ニ ヨル タソウ ハクマク カイメン

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抄録

Analysis of oxide/metal interface using SIMS has been investigated. In general, SIMS enables us to detect trace amounts of elements, but the change of the secondary ion yield at the interfaces results in ghost peaks during the depth profile analysis. This phenomenon makes it difficult to get accurate information on interdiffusion at the multilayer interface. In this study, use of Cs+ primary beam with detection of CsX+ cluster ions has been found to successfully eliminate those ghost peaks, since CsX+ cluster ions are free from matrix effects. The developed technique was used to analyze Si/ZnO and TiN/glass interfaces. Mechanisms with respect to bonding properties and stability of the coating films are discussed on the basis of this analysis.

収録刊行物

  • 分析化学

    分析化学 40 (4), 159-162, 1991

    公益社団法人 日本分析化学会

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