書誌事項
- タイトル別名
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- Electrical properties of Al-doped and B-doped amorphous SiC:H films prepared by cosputtering.
- Co-sputterホウ ニ ヨル Al オヨビ B テンカ a SiC H
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説明
Groups III impurity (aluminum or boron) has been introduced into a-SiC:H by the cosputtering method. The dependence of the optical, electrical and opto-electronic properties on the imurity content has been investigated.<BR>In the range of the aluminum content z up to about 10-2, the photoconductive nature is maintained and the activation energy of dark conductivity changes, without a significant change in the optical band gap. This suggests the doping effect which is confirmed by the thermoelectric power measurements where the type of conduction changes from n to p with increasing z.<BR>From similar results for boron doped films, the doping efficiency is found to be higher for boron than for aluminium.
収録刊行物
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- 真空
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真空 33 (9), 733-737, 1990
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390001204065328000
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- NII論文ID
- 130000862523
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- NII書誌ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL書誌ID
- 3690976
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可