MOCVD法によるTa2O5薄膜作製用原料としての高純度[Ta(dpm)4]Clの合成

DOI Web Site

書誌事項

タイトル別名
  • Synthesis of High Purity [Ta(dpm), ]Cl for Preparation of Ta205 Fhin Tilrns by MOCVD
  • Synthesis of High Purity (Ta(dpm)4)Cl for Preparation of Ta2O5 Fhin Tilms by MOCVD.

抄録

Synthesis of highly pure dipivaloylmethane (Hdpm) chelates of Tantalum(V) was investigated. The chelates were synthesized by the reaction of the ligands with Tantalum pentachlcride using anhydrous solvents under high purity argon gas atmosphere.<BR>[Ta(dpm)4]Cl was syntesized as a new source material for p reparation of Ta2O5 thin films by MOCVD. [Ta(dpm)4]Cl was in good agreement with the calculated value in the results of ICP and elemental analysis, and was confirmed by FT-IR, 1H-NMR, 13C-NMR, and TGDTA. Vaporization of impurities was not found in TG measurement. The tantalum complex vaporized in the range of 220 to 360 °C without residue.<BR>[Ta(dpm)4]Cl proved to be superior in volatility and purity for the MOCVD source material.

収録刊行物

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ