書誌事項
- タイトル別名
-
- Residual Hydrogen in Polycrystalline Silicon Produced from Monosilane by Fluidized-Bed CVD Method.
- リュウドウソウ CVDホウ ニ ヨリ モノシラン カラ セイゾウシタ タケッシ
この論文をさがす
抄録
It has been pointed out that polycrystalline silicon particles produced from monosilane by the fluidized-bed CVD method contain residual hydrogen that causes disturbance of flow in a crucible in the CZ process. In the present work, the residual hydrogen was desorbed from produced Si particles by heat treatment. The activation energy for the hydrogen desorption was determined by the temperature-programmed desorption (TPD) technique. By FTIR, various types of Si-H bonds were found in the Si particles produced. The adsorbance area was decreased with increase in the desorbed hydrogen by TPD. From this relationship, the total amount of residual hydrogen was determined to be around 0.05% of the hydrogen contained in the reacted monosilane. The particle density of Si particles increased linearly almost up to the true density, with a decrease in the absorbance area of FTIR by the heat treatment.
収録刊行物
-
- 化学工学論文集
-
化学工学論文集 18 (5), 701-707, 1992
公益社団法人 化学工学会
- Tweet
キーワード
詳細情報 詳細情報について
-
- CRID
- 1390001204509460352
-
- NII論文ID
- 130000863275
-
- NII書誌ID
- AN00037234
-
- ISSN
- 13499203
- 0386216X
-
- NDL書誌ID
- 3784129
-
- 本文言語コード
- ja
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可