Macroscopic Analyses of a-SiGe: H Film Deposition by Plasma CVD
-
- Ichikawa Yukimi
- Fuji Electric Corporate Research and Development, Ltd.
Bibliographic Information
- Other Title
-
- プラズマCVDによるa-SiGe:H薄膜堆積に関する巨視的解析
- プラズマ CVD ニ ヨル a SiGe H ハクマク タイセキ ニ カンスル キョシテキ カイセキ
Search this article
Abstract
Plasma CVD is widely used for deposition of hydrogenated amorphous silicon (a-Si:H) based materials. To obtain desired properties of deposited film in this technique, controllable parameters such as gas pressure, gas flow rate and discharge power are varied empirically, and no precise simulation is so far available. Thus in this work, an analysis based on macroscopic model was developed to provide a tool to understand the relationship between those controllable parameters and the film properties such as germanium content in a-SiGe:H alloy films. The results were compared with some experiments, and it was shown that these are in good agreement.
Journal
-
- IEEJ Transactions on Fundamentals and Materials
-
IEEJ Transactions on Fundamentals and Materials 121 (1), 52-58, 2001
The Institute of Electrical Engineers of Japan
- Tweet
Keywords
Details 詳細情報について
-
- CRID
- 1390001204598935296
-
- NII Article ID
- 130006838762
- 10005322136
-
- NII Book ID
- AN10136312
-
- ISSN
- 13475533
- 03854205
-
- NDL BIB ID
- 5620582
-
- Data Source
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- Abstract License Flag
- Disallowed