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- 市川 幸美
- (株)富士電機総合研究所)
書誌事項
- タイトル別名
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- Macroscopic Analyses of a-SiGe: H Film Deposition by Plasma CVD
- プラズマ CVD ニ ヨル a SiGe H ハクマク タイセキ ニ カンスル キョシテキ カイセキ
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抄録
Plasma CVD is widely used for deposition of hydrogenated amorphous silicon (a-Si:H) based materials. To obtain desired properties of deposited film in this technique, controllable parameters such as gas pressure, gas flow rate and discharge power are varied empirically, and no precise simulation is so far available. Thus in this work, an analysis based on macroscopic model was developed to provide a tool to understand the relationship between those controllable parameters and the film properties such as germanium content in a-SiGe:H alloy films. The results were compared with some experiments, and it was shown that these are in good agreement.
収録刊行物
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- 電気学会論文誌. A
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電気学会論文誌. A 121 (1), 52-58, 2001
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390001204598935296
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- NII論文ID
- 130006838762
- 10005322136
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- NII書誌ID
- AN10136312
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- ISSN
- 13475533
- 03854205
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- NDL書誌ID
- 5620582
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- データソース種別
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- JaLC
- NDL
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