Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing
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- Ng Jin-Aun
- Frontier Collaborative Research Center
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- Sugii Nobuyuki
- Interdisciplinary Graduate School of Science and Engineering Tokyo Institute of Technology
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- Kakushima Kuniyuki
- Interdisciplinary Graduate School of Science and Engineering Tokyo Institute of Technology
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- Ahmet Parhat
- Frontier Collaborative Research Center
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- Tsutsui Kazuo
- Interdisciplinary Graduate School of Science and Engineering Tokyo Institute of Technology
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- Hattori Takeo
- Frontier Collaborative Research Center
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- Iwai Hiroshi
- Frontier Collaborative Research Center
説明
In this paper, we reported the effective mobility and the interface-state density of La2O3 nMISFETs fabricated under different post deposition annealing (PDA) conditions; annealing temperature (300°C - 600°C) and ambient (N2 or O2). High effective mobility of 312cm2/Vs and low interface-state density of 6 × 1010cm-2/eV were obtained from La2O3 nMISFET with equivalent oxide thickness (EOT) of 1.7nm after PDA at 300°C in N2 ambient for 10 minutes. Gate leakage current density was 6.8 × 10-6A/cm2. We found that peak effective mobility decreased with increasing anneal temperature, regardless of annealing ambient. We also observed a monotonous relationship between effective mobility and interface-state density. This behavior suggests that lowering the interface-state density is essential to obtain high mobility in the high-κ/Si structure.
収録刊行物
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- IEICE Electronics Express
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IEICE Electronics Express 3 (13), 316-321, 2006
一般社団法人 電子情報通信学会
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詳細情報 詳細情報について
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- CRID
- 1390001205212673408
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- NII論文ID
- 130000088263
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- ISSN
- 13492543
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
- OpenAIRE
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- 抄録ライセンスフラグ
- 使用不可
