Fundamental study on the treatment of silicon wafer edge by ultrasonically assisted polishing

DOI

Bibliographic Information

Other Title
  • 超音波援用研磨によるシリコンウェーハエッジのトリートメントに関する基礎研究

Description

The present work aims to develop an ultrasonic vibration assisted polishing technology for the silicon wafer edge. This paper describes the fabrication of an experimental apparatus composed mainly of an ultrasonic polishing tool, and the experimental investigation of its performance in silicon wafer surface polishing. Fundamental experiments were carried out on the fabricated apparatus involving 200mm wafer surface in order to investigate the effects of the ultrasonic vibration on surface roughness. The experimental results indicate that applying ultrasonic vibration decreases surface roughness in the maximum by 58%.

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Keywords

Details 詳細情報について

  • CRID
    1390001205652211072
  • NII Article ID
    130004658145
  • DOI
    10.11522/pscjspe.2006a.0.421.0
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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