S1660101 ワイドギャップ半導体材料基板の高能率・高品位加工を実現する高速圧加工装置および革新的研磨パッドの開発([S166]窒化物半導体デバイスの精密加工プロセス)

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タイトル別名
  • S1660101 Development of high-pressure/high-rotation processing machine and innovative polishing pad to achieve high efficiency and high-grade quality processing of wide-gap semiconductor material substrates

抄録

This study is intended to realize the high efficiency and high-grade quality processing of the wide gap semiconductor material substrate (SiC, GaN). We promote the research and development of the total process that fused each technique (device / system, polishing pad, slurry, etc.) into one ideally. By using a high-pressure / high-rotation processing machine and the innovative polishing pad which we developed in this study, it realized several-fold processing efficiency and large improvement of high-grade quality processing in comparison with a conventional technique.

収録刊行物

  • 年次大会

    年次大会 2014 (0), _S1660101--_S1660101-, 2014

    一般社団法人 日本機械学会

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