OS2406 半導体デバイス配線構造における局所付着強度分布の統計的評価の試み(OS24-2 三次元積層半導体チップにおけるシリコン貫通ビア/微細金属接合技術と強度信頼性,OS-24 三次元積層半導体チップにおけるシリコン貫通ビア/微細金属接合技術と強度信頼性)

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  • OS2406 A statistical study for distribution of local adhesion strength in semiconductor device metallization systems

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A technique to evaluate local interface strength measured a considerable range of scatter in toughness of interface between Cu and SiN cap layer in LSI interconnect. In order to estimate the range of uncertainty in the evaluation procedure, the same technique was applied to the interface of vapor-deposited Au and native SiO_2 on a silicon wafer, which was expected to have a relatively homogeneous adhesion strength. By combining the obtained results with the statistical analysis, uncertainties in the evaluation procedure were evaluated and excluded from the scatter in the measurement results of Cu/SiN interface. Finally, the intrinsic fluctuation of interface strength due to the material properties was successfully determined.

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