書誌事項
- タイトル別名
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- 27aB08 Sputtering processes of wide-gap semiconductors induced by highly-charged ions(NCCG-34)
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In order to investigate potential sputtering processes of wide-gap semiconductors induced by highly-charged-ion impact, three-dimensional momentum of sputtered ions from a SiC (0001) surface was measured by a newly developed device. The experimental results suggest that the potential sputtering process plays an important role in low energy interaction between highly-charged ion and SiC surface.
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 31 (3), 268-, 2004
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390001205898203264
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- NII論文ID
- 110007327598
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- NII書誌ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可