6. プラズマ・プロセスのアモルファス半導体への応用

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書誌事項

タイトル別名
  • Application of Plasma Processes to Amorphous Semiconductors
  • ヒロガル プラズマ ノ アタラシイ オウヨウ プラズマ プロセス 4 プラズマ

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抄録

Present states of the understanding of the defects creation in the plasma processes to prepare hydrogenated amorphous silicon films a-Si : H are briefly reviewed. Then photo-induced defects creation that is called the Staebler-Wronski effect are also reviewed. Finally dimensionality in amorphous semiconductors are discussed with the example of Si-C system, especially stressed in hydrogenated one dimensional Si-C alloys which are situated between polysilane (SiH2)n and polyacetylene (CH)n.

収録刊行物

  • 核融合研究

    核融合研究 57 (4), 215-222, 1987

    社団法人 プラズマ・核融合学会

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