Effects of High-Temperature Annealing and Thermal Oxidation on Fermi level of High-Purity Semi-Insulating 4H-SiC Substrates
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- Koo Chansoon
- Kyoto Univ.
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- Kaneko Mitsuaki
- Kyoto Univ.
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- Kimoto Tsunenobu
- Kyoto Univ.
Bibliographic Information
- Other Title
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- 高温アニールおよび熱酸化処理による高純度半絶縁性4H-SiC基板のフェルミ 準位の変化
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2020.2 (0), 2143-2143, 2020-08-26
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390010457641211776
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC
