Targets for High Rate Reactive Sputtering. Propose of Reactive Sputtering using Solid Oxygen Source for Low-Temperature and High Deposition Rate Fabrication of Pb(Zr,Ti)O3 Thin Film.

DOI Web Site 14 References
  • KAWAGOE Shinya
    Graduate School of Natural Science and Technology Kanazawa University
  • KIM Je-Deok
    Graduate School of Natural Science and Technology Kanazawa University
  • YOSHIDA Yukio
    Depertment of Electrical and Electronic Engineering Facutly of Engineering Kanazawa University
  • SASAKI Kimihiro
    Graduate School of Natural Science and Technology Kanazawa University
  • HATA Tomonobu
    Depertment of Electrical and Electronic Engineering Facutly of Engineering Kanazawa University

Bibliographic Information

Other Title
  • 反応性スパッタリングとターゲット　　Ｐｂ（Ｚｒ，Ｔｉ）Ｏ３薄膜の低温・高速堆積用の固体酸素供給源による反応性スパッタ法の提案
  • Pb Zr Ti O3 ハクマク ノ テイオン コウソク タイセキヨウ ノ コタイ サンソ キョウキュウ ゲン ニ ヨル ハンノウセイ スパッタホウ ノ テイアン

Search this article

Description

A new film deposition technique by reactive sputtering using a metal-oxide combined targe (ZrTi + PbO) was proposed and the film growth mechanism was discussed. By the technique perovskite Pb (Zr, Ti) O3 (PZT) films could be grown at a substrate temperature as low as 450°C. Oxygen atoms for the reactive sputtering was not supplied from introduced O2 gas but from the PbO oxide target. The oxygen flux from the PbO solid source plays an important role to crystallize the perovskite PZT films.

Journal

  • Shinku

    Shinku 43 (8), 785-789, 2000

    The Vacuum Society of Japan

References(14)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top