Quantitative Analysis of the Composition for a-Si<SUB><I>x</I></SUB>Ci<SUB>1-<I>x</I></SUB> : H Alloys by XPS

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  • ＸＰＳによるａ‐Ｓｉ?Sｘ?TＣ?S１－ｘ?T：Ｈ合金の組成分析
  • XPS ニヨル a SixC1 X H ゴウキン ノ ソセイ ブンセキ

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Description

Amorphous Si-C with H (aSixC1-x : H) alloy system formed in the gas mixture of Ar + 20% H2 by r.f. sputtering method has been studied quantitatively by X-ray photoelectron spectroscopy (XPS). The composition x has been obtained as a function of the fractional area (A) of Si on the sputtering target by using epitaxial grown SiC films as a standard. As a result, the composition x can be approximately evaluated by the equation; x = A/ {A + (1-A) ·ξ}, (ξ = 0.54), where ξ is the sputtering ratio of graphite to Si.

Journal

  • Shinku

    Shinku 23 (6), 303-309, 1980

    The Vacuum Society of Japan

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