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- 三島 康由
- (株) 富士通研究所
書誌事項
- タイトル別名
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- Plasma Technology for Poly-crystaline Silicon Thin Film Transister Manufacturing. Polycrystalline Silicon Film Growth by Ultrahigh-vacuum Sputtering System.
- チョウコウシンクウ スパッタリング ソウチ オ モチイタ タケッショウ Si マク ノ ケイセイ
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説明
Using in ultrahigh-vacuum (UHV) system, we could form polycrystalline silicon films. Polycrystalline silicon (poly-Si) films are formed on glass at substrate temperature below 550°C. We used two methods of crystallization. One is asdeposited polycrystalline Si by an UHV sputtering method and the other is solid-phase crystallization (SPC) of silicon film in UHV conditions. As-deposited poly-Si is oriented to (220) and SPC poly-Si is oriented to (111). The crystallinity is improved by increasing film thickness in as-deposited poly-Si film. Ar atoms, which are used for sputtering, disturb the crystallization. Ar concentration in SPC poly-Si is influenced by annealing pressure and surface conditions of Si film. Oxide layer on Si film disturbs SPC. The field effect mobility, 18 cm2/Vs, was obtained by a SPC poly-Si TFT.
収録刊行物
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- 真空
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真空 44 (6), 578-582, 2001
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390282679042112384
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- NII論文ID
- 10007389467
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- NII書誌ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL書誌ID
- 5827292
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
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- 抄録ライセンスフラグ
- 使用不可
