Fabrication of Multi-bit Crossbar Circuits at Sub-50 nm Half-pitch by Using UV-based Nanoimprint Lithography
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- Young Gun
- Hewlett-Packard Labs
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- Wu Wei.
- Hewlett-Packard Labs
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- Lee Heon
- Division of Materials Science and Engineering, Korea University
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- Wang S. Y.
- Hewlett-Packard Labs
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- Tong William M.
- Hewlett-Packard Labs Hewlett-Packard Company
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- Williams R. Stanley
- Hewlett-Packard Labs
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Nanoimprinting lithography was initiated as an alternative way to achieve nanoscale structures with high throughput and low cost. We have developed a UV-nanoimprint process to fabricate 34(34 crossbar circuits at 50 nm half-pitch (equivalent to a bit density of 10 Gbit/cm2) with single-layer structure. We devised a technique that exploits the opposite free energies of the mold and substrate surfaces to produce a very uniform resist film without any trap air. As the pitch size decreases, lift-off process with single-layer structure was difficult to define metal wires. Sixty-six by sixty-six crossbar structures with a half-pitch of 30 nm (equivalent to a bit density of 30 Gbit/cm2) were produced with bi-layer structure.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 18 (5), 565-570, 2005
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詳細情報 詳細情報について
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- CRID
- 1390282679301911424
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- NII論文ID
- 130004833054
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- NII書誌ID
- AA11576862
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 7338162
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可