Chemically Amplified Si-contained Resist Using Silsesquoxane for ArF Lithography (CASUAL) and its Application to Bi-Layer Resist Process.

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  • Chemically Amplified Si contained Resis

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We have proposed a chemically amplified Si containing resist used silsesquoxane polymer for ArF Lithography (CASUAL). ACASUAL-type polymer of carbon-acid-cyclohexl-silsesgouxane with photo-acid-generators acted as positive-tone resists under ArF exposure; the resist was highly transparent (<50% at 350-nm-thick resist), highly sensitive (<7mJ/cm2) and showed excellent resolution (sub 02μm) for 193-nm exposure. Well-defined sub-02μm BLR patterns were delineated successfully.

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