Ultra-Fine Pitch Electrical feed through using Si deep etching and bonding wafer
-
- Suzuki Takaaki
- Tosei Electrobeam CO., LTD
-
- Uchino Kazuyoshi
- Tosei Electrobeam CO., LTD
-
- Yokoi Tetsurou
- Tosei Electrobeam CO., LTD
-
- Rai Yumen
- Tokyo Cathode Laboratry CO., LTD
-
- Takizawa Hiroyuki
- Tokyo Cathode Laboratry CO., LTD
-
- Maeda Ryutaro
- AIST., MITI.
-
- Takagi Hideki
- AIST., MITI.
-
- Hanada Koutarou
- AIST., MITI.
Bibliographic Information
- Other Title
-
- Si微細加工および貼り合わせ技術を利用した超微細ピッチ配線技術
- Si ビサイ カコウ オヨビ ハリアワセ ギジュツ オ リヨウ シタ チョウビサイ ピッチ ハイセン ギジュツ
Search this article
Abstract
Si based multi-layered print circuit board is developed. The Si wafer, which has the same thermal coefficient as mounted chips, of 4 inch size was used and we have fabricated the electrical feed through by filling the metal into the small holes prepared by ICP etching. Moreover the wafers with through holes and trenches were aligned and bonded to make the stacked layer structure and we had tried the metal filling into the holes and trenches. The fabricated device was tested by insulation measurement. As a result, insulating layer of more than 1GΩ was obtained.
Journal
-
- IEEJ Transactions on Sensors and Micromachines
-
IEEJ Transactions on Sensors and Micromachines 122 (8), 409-414, 2002
The Institute of Electrical Engineers of Japan
- Tweet
Details 詳細情報について
-
- CRID
- 1390282679438635904
-
- NII Article ID
- 130005403988
- 10009583395
-
- NII Book ID
- AN1052634X
-
- ISSN
- 13475525
- 13418939
-
- NDL BIB ID
- 6244599
-
- Text Lang
- ja
-
- Data Source
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- Abstract License Flag
- Disallowed