書誌事項
- タイトル別名
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- Low Temperature Al-Al Thermo-compression Bonding with Sn Oxidation Protect Layer for Wafer-level Hermetic Sealing
- サンカ ボウシソウ ニ Sn オ モチイタ テイオン Al-Al ネツ アッチャク ウェハレベル シンクウ フウシ セツゴウ ノ ケンキュウ
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This paper describes hermetic seal wafer bonding using Al covered with thin Sn as an antioxidation layer. The bonding temperature is below 400℃, which is the maximum temperature of CMOS-LSI backend process. Gas tightness over 3000 h at room temperature and sealing stability through heat treatment under a typical reflow condition of 260℃ for 10 min were confirmed for samples bonded at 370℃ and 380℃. A key for successful hermetic seal bonding is relatively high bonding pressure and stress concentration on sealing frames as narrow as several ten microns. The results of SEM and EDX analysis suggested that the bonding was due to direct Al-Al bonding, while Sn was diffused sparsely among Al grain boundaries. The developed bonding technology is usable for wafer-level integration of LSI and MEMS in conjunction with hermetic sealing.
収録刊行物
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- 電気学会論文誌Ｅ（センサ・マイクロマシン部門誌）
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電気学会論文誌Ｅ（センサ・マイクロマシン部門誌） 136 (6), 237-243, 2016
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390282679439227648
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- NII論文ID
- 130005154786
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- NII書誌ID
- AN1052634X
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- ISSN
- 13475525
- 13418939
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- NDL書誌ID
- 027489018
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可