High-Density Radio-Frequency Plasma Sources Produced by Capacitive Discharge with Various Methods for Thin-Film Preparation
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- Ohtsu Yasunori
- Department of Electrical and Electronic Engineering, Graduate School of Science and Engineering, Saga University
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説明
Radio-frequency plasma produced by capacitive discharge has been widely used for microelectronic industry because it has a simple structure in its device and its easy maintenance. However, it has disadvantage such as a low plasma-density with the magnitude of 108-109 cm-3. In the paper, high-density radio-frequency capacitive-discharge plasma sources with various methods have been reviewed for thin-film preparation. These methods are the segmented electrode under high driving frequency, the high-secondary-electron-emission-electrode and the various hollow cathode electrodes. In this review, these solutions are assessed and discussed.
収録刊行物
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- 電気学会論文誌. A
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電気学会論文誌. A 130 (10), 865-870, 2010
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390282679575611392
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- NII論文ID
- 130000415280
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- NII書誌ID
- AN10136312
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- ISSN
- 13475533
- 03854205
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- NDL書誌ID
- 10830838
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可