Hydrogen and Carbon-Related Defects in Heavily Carbon-Doped GaAs Induced Degradation under Minority-Carrier Injection
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- Fushimi Hiroshi
- New Japan Radio Co., Ltd.
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- Wada Kazumi
- The University of Tokyo
Bibliographic Information
- Other Title
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- GaAs系HBTの信頼性と結晶欠陥の相関
- GaAsケイ HBT ノ シンライセイ ト ケッショウ ケッカン ノ ソウカン
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Abstract
GaAs/AlGaAs hetero-junction bipolar transistors (HBTs) have attracted much attention because of their high-speed performance. However, long-term operation seriously degrades the device characteristics: Current gain decreases and low-bias-leakage current increases. This degradation has long been an issue in GaAs-based devices operated under minority-carrier injection, like laser diodes. The cause of degradation is thought to be in the carbon-doped base, but this is not yet certain. In this paper degradation of HBTs is described, especially GaAs/AlGaAs HBTs with heavily carbon-doped base layer. Here, two types of the device degradation are found, i.e., hydrogen-related degradation and carbon-related degradation. The mechanisms governing the degradation are discussed from the framework of recombination enhanced defect reaction (REDR) and charge state effect (CSE).
Journal
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- IEEJ Transactions on Electronics, Information and Systems
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IEEJ Transactions on Electronics, Information and Systems 128 (6), 838-845, 2008
The Institute of Electrical Engineers of Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390282679582722048
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- NII Article ID
- 10021132547
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- NII Book ID
- AN10065950
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- ISSN
- 13488155
- 03854221
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- NDL BIB ID
- 9531775
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed