書誌事項
- タイトル別名
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- Hydrogen and Carbon-Related Defects in Heavily Carbon-Doped GaAs Induced Degradation under Minority-Carrier Injection
- GaAsケイ HBT ノ シンライセイ ト ケッショウ ケッカン ノ ソウカン
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抄録
GaAs/AlGaAs hetero-junction bipolar transistors (HBTs) have attracted much attention because of their high-speed performance. However, long-term operation seriously degrades the device characteristics: Current gain decreases and low-bias-leakage current increases. This degradation has long been an issue in GaAs-based devices operated under minority-carrier injection, like laser diodes. The cause of degradation is thought to be in the carbon-doped base, but this is not yet certain. In this paper degradation of HBTs is described, especially GaAs/AlGaAs HBTs with heavily carbon-doped base layer. Here, two types of the device degradation are found, i.e., hydrogen-related degradation and carbon-related degradation. The mechanisms governing the degradation are discussed from the framework of recombination enhanced defect reaction (REDR) and charge state effect (CSE).
収録刊行物
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- 電気学会論文誌C(電子・情報・システム部門誌)
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電気学会論文誌C(電子・情報・システム部門誌) 128 (6), 838-845, 2008
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390282679582722048
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- NII論文ID
- 10021132547
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- NII書誌ID
- AN10065950
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- ISSN
- 13488155
- 03854221
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- NDL書誌ID
- 9531775
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可