書誌事項
- タイトル別名
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- Formation of Deep pn Junctions by High-Energy Al and B Ion Implantations into SiC
- SiC エ ノ コウエネルギー Al Bイオン チュウニュウ ニ ヨル フカイ セツゴウ ノ ケイセイ
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High-energy (MeV) implantation of Al+ and B+ into SiC epilayers has been investigated. A 3μm-deep pn junction is formed by room-temperature multiple Al+ or B+ implantation with implantation energies up to 6.2MeV or 3.4MeV, respectively. Rutherford backscattering channeling measurements have revealed that implantation-induced damages can be reduced close to a virgin level by high-temperature annealing at 1700_??_1800°. High electrical activation ratios over 90% have been achieved for both Al+- and B+-implanted layers by annealing at 1800°. Mesa pn diodes with a 15μm-thick n-layers formed by MeV implantation have exhibited high breakdown voltages of 2860_??_3080V. The reverse characteristics of the diodes have been substantially improved by increasing annealing temperature up to 1800°. The diode performance is discussed with the results of deep level analyses near the junctions.
収録刊行物
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- 電気学会論文誌Ｃ（電子・情報・システム部門誌）
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電気学会論文誌Ｃ（電子・情報・システム部門誌） 122 (1), 17-22, 2002
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390282679587819904
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- NII論文ID
- 130006845854
- 10007655321
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- NII書誌ID
- AN10065950
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- ISSN
- 13488155
- 03854221
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- NDL書誌ID
- 6025768
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