書誌事項
- タイトル別名
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- Poly-Silicon TFT Annealing with XeCl Excimer Laser.
- XeCl エキシマレーザー ニ ヨル ポリシリコン TFT アニーリング
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抄録
Liquid-crystal displays (LCDs) with thin film transistors (TFTs) are common in digital and video cameras. An Excimer-Laser Annealing (ELA) method is now commonly integrated into a low-temperature poly-silicon (p-Si) TFT process. Since the ELA process can be performed below 400°C, it is possible to use a low-cost standard glass instead of a quartz glass as a TFT substrate. Our ELA system with a XeCl excimer laser has a line beam optic system, handling the beam length of up to 275mm. The line beam scans an amorphous-silicon (a-Si) thin film on the substrate. As a result, the a-Si film changes into the p-Si film immediately. We demonstrated crystallization of a-Si thin films on different annealing conditions such as various laser energy levels and various substrate temperatures. It was found that the crystal-grain size of the p-Si film strongly depends on both the energy density and the substrate temperature.
収録刊行物
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- レーザー研究
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レーザー研究 28 (1), 24-28, 2000
一般社団法人 レーザー学会
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詳細情報 詳細情報について
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- CRID
- 1390282679622860288
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- NII論文ID
- 130003702781
- 10005722079
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- NII書誌ID
- AN00255326
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- ISSN
- 13496603
- 03870200
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- NDL書誌ID
- 4967046
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可